EAVES STRUCTURES ON (100)INP AND INP INGAASP/INP HETEROSTRUCTURES/

An etching method for eaves structures on (001) InP and InP/InGaAsP/In P double heterostructures is presented. The eaves structures are etche d by a combination of reactive ion etching and wet chemical etching wi th a Si3N4 mask. Using this method the vertical and lateral etched dep th have been controlled separately by reactive ion etching and wet che mical etching. The fundamental characteristics of the wet chemical etc hing on a mesa structure, such as etched profiles and etching rates, a re studied using H3PO4:H2O:saturated bromine water, HNO3:HBr:H2O and H Br:H2O:saturated bromine water solutions. Influence of the etched prof iles and orientations on metallorganic chemical vapor deposition growt h behavior is investigated. Using this method 1.55 mu m wavelength hig h modulation bandwidth semiconductor lasers have been fabricated.