A MULTISCALE SIMULATOR FOR LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION

An integrated simulator for chemical vapor deposition is introduced. I n addition to reactor scale and feature scale simulators, it includes a ''mesoscopic'' scale simulator with the typical length scale of a di e. It is shown that the ''three-scale'' integrated simulator used is a proper extension of ''two-scale'' deposition simulators that consist of reactor scale and feature scale simulation models. Moreover, it is demonstrated that information is provided on a new length scale, for w hich no information is available from the ''two-scale'' approach, as w ell as important corrections to the simulation results on the reactor scale. This enables, for instance, studies of microloading. Thermally induced deposition of silicon dioxide from tetraethyoxysilane is chose n as the application example. The deposition chemistry is modeled usin g six gaseous reacting species involved in four gas-phase and eight su rface reactions.