MEASUREMENT OF SHALLOW ARSENIC IMPURITY PROFILES IN SEMICONDUCTOR SILICON USING TIME-OF-FLIGHT SECONDARY-ION MASS-SPECTROMETRY AND TOTAL-REFLECTION X-RAY-FLUORESCENCE SPECTROMETRY

Arsenic was implanted into silicon to doses of approximately 10(14) cm (-2) using energies of 0.5, 1, and 5 keV. The corresponding depth prof iles were examined using time of flight secondary ion mass spectrometr y (ToF-SIMS) and total reflection x-ray fluorescence spectrometry (TXR F). With the exception of the first few,nanometers, TXRF was not able to measure an extended profile with reasonable resolution. However, be cause of the easy and exact quantification of the technique, TXRF was used for the determination of the As doses. in addition, TXRF was appl ied to correct the original SIMS profiles for the near-surface zone be cause of the excellent depth profiling capability for the first few na nometers. SIMS and TXRF provide complementary information and therefor e the most reliable results were obtained using the two techniques in combination.