OXIDATION ENHANCED DIFFUSION OF BORON IN SILICON-ON-INSULATOR SUBSTRATES

The oxidation enhanced diffusion (OED) of boron and diffusion as well as recombination of interstitials on silicon-on, insulator (SOI) mater ial have been studied in periodically boron-doped silicon. Bonded wafe rs (BESOI UNIBOND) as well as oxygen-implanted wafers (SIMOX) have bee n used to consider different interfacial morphologies. Diffusion exper iments were performed in the temperature range of 800 to 1050 degrees C and compared with SUPREM-IV simulation results. Parameters like reco mbination velocity and diffusivity of interstitials have been extracte d. Results show for the first time that OED is effectively reduced in SOI material in the near Si/SiO2-interface region as well as in the su rface region.