ORIENTED SINGLE-PHASE PBZRO3 THIN-FILMS ON SI(100) SUBSTRATE USING AQUEOUS SOL WITH RAPID THERMAL ANNEALING

Thin films of PbZrO3 were fabricated on Si(100) substrate for the firs t time by spin coating the aqueous sol of lead and zirconium hydroxy c omplex. Phase formation is achieved by conventional furnace annealing as well as rapid thermal annealing. Deposition conditions are optimize d to realize continuous, phase pure, oriented films. The initial conce ntration of precursor solution, rate of spin coating and post annealin g conditions play an important role in determining the quality of the films. PbZrO3, which is known to be antiferroelectric in the bulk stat e at room temperature, exhibits ferroelectric properties when the film thickness is reduced to about 0.08 mu m. This peculiar behavior may b e attributed to defects and surface charge induced fields. (C) 1997 El sevier Science B.V.