FREQUENCY-DEPENDENCE ON TEMPERATURE OF AC CONDUCTANCE IN SILICON DETECTORS

Measurements of the real and imaginary parts of admittance Y as a func tion of frequency omega, up to 10(3) kHz at temperatures 10 K less tha n or equal to T less than or equal to 270 K, were performed. The corre sponding electric circuit model of Y(omega) was calculated. A quadrati c dependence of G(omega) on omega for 40 K less than or equal to T les s than or equal to 270 K was obtained. At lower temperatures, T less t han or equal to 40 K, a dependence of G on omega '' was obtained, wher e n < 2. It was shown that the value of omega where n < 2 (omega = ome ga(c)) depends on T: with decreasing T the value of omega(c) decreases . For T less than or equal to 20 K freeze out of free carriers produce s a strong reduction of G and independence on omega. It was shown that the resistivity rho is a function of T and two types of behaviour app ear (phonon scattering and freeze-out phenomena) in the interval 10 K less than or equal to T less than or equal to 270 K. (C) 1997 Elsevier Science B.V.