LOW-FREQUENCY NOISE BEHAVIOR IN SEMICONDUCTORS

Authors
MELKONYAN SV GASPARYAN FV AROUTIUNYAN VM
Citation
Sv. Melkonyan et al., LOW-FREQUENCY NOISE BEHAVIOR IN SEMICONDUCTORS, Modern physics letters B, 11(20), 1997, pp. 899-907
Citations number
17
Categorie Soggetti
Physics, Applied","Physics, Condensed Matter","Physycs, Mathematical
Journal title
Modern physics letters B → ACNP
ISSN journal
02179849
Volume
11
Issue
20
Year of publication
1997
Pages
899 - 907
Database
ISI
SICI code
0217-9849(1997)11:20<899:LNBIS>2.0.ZU;2-2
Abstract
The low frequency behavior of the generation-recombination noise in th e homogeneous semiconductors is investigated. The form of Lorentz law for spectral density of noise at low frequencies is made more precise. It is shown that at superflow frequencies the spectrum of generation- recombination noise changes into the 1/f-law. The characteristic frequ ency of this change depends on the temperature and dimensions of the s ample.