Gb. Galiev et al., INVESTIGATION OF THE STRUCTURAL-PROPERTIES OF GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURES, Semiconductors, 31(10), 1997, pp. 1003-1005
The results of an investigation of the structural perfection of GaAs e
pitaxial films grown by molecular-beam epitaxy at low growth temperatu
res (240-300 degrees C) and various As/Ga flux ratios (from 3 to 13) a
re presented. Diffraction reflection curves display characteristic fea
tures for the samples before and after annealing in the temperature ra
nge from 300 to 800 degrees C. Hypotheses which account for these feat
ures are advanced. The range of variation of the arsenic/gallium flux
ratio, in which low-temperature growth takes place under nearly stoich
iometric conditions, is established. (C) 1997 American Institute of Ph
ysics. [S1063-7826(97)00410-9].