INVESTIGATION OF THE STRUCTURAL-PROPERTIES OF GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURES

Citation
Gb. Galiev et al., INVESTIGATION OF THE STRUCTURAL-PROPERTIES OF GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURES, Semiconductors, 31(10), 1997, pp. 1003-1005
Citations number
16
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
10637826
Volume
31
Issue
10
Year of publication
1997
Pages
1003 - 1005
Database
ISI
SICI code
1063-7826(1997)31:10<1003:IOTSOG>2.0.ZU;2-Q
Abstract
The results of an investigation of the structural perfection of GaAs e pitaxial films grown by molecular-beam epitaxy at low growth temperatu res (240-300 degrees C) and various As/Ga flux ratios (from 3 to 13) a re presented. Diffraction reflection curves display characteristic fea tures for the samples before and after annealing in the temperature ra nge from 300 to 800 degrees C. Hypotheses which account for these feat ures are advanced. The range of variation of the arsenic/gallium flux ratio, in which low-temperature growth takes place under nearly stoich iometric conditions, is established. (C) 1997 American Institute of Ph ysics. [S1063-7826(97)00410-9].