CHARACTERIZATION OF MACRODEFECTS IN PURE SILICON-CARBIDE FILMS USING X-RAY TOPOGRAPHY AND RAMAN-SCATTERING

Raman and X-ray topographic measurements were carried out on epitaxial films of silicon carbide grown at Cree Research Inc. by vapor-phase e pitaxy on bulk 6H-SiC substrates. The objective was to identify ranges of the Raman spectrum of 6H-SiC that were particularly sensitive to m acrostructural defects (dislocations, inclusions, etc.) in these films , and to determine what conclusions could be drawn about the propertie s of the corresponding portions of the films. (C) 1997 American Instit ute of Physics. [S1063-7826(97)01310-0].