EFFECT OF INFRARED-LASER RADIATION ON THE STRUCTURE AND ELECTROPHYSICAL PROPERTIES OF UNDOPED SINGLE-CRYSTAL INAS

Authors
PLYATSKO SV KLADKO VP
Citation
Sv. Plyatsko et Vp. Kladko, EFFECT OF INFRARED-LASER RADIATION ON THE STRUCTURE AND ELECTROPHYSICAL PROPERTIES OF UNDOPED SINGLE-CRYSTAL INAS, Semiconductors, 31(10), 1997, pp. 1037-1040
Citations number
10
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
31
Issue
10
Year of publication
1997
Pages
1037 - 1040
Database
ISI
SICI code
1063-7826(1997)31:10<1037:EOIROT>2.0.ZU;2-T
Abstract
Substantial changes have been found in the electrical properties and s tructural parameters of single-crystal InAs after exposure to infrared laser radiation with photon energy less than the energy gap of InAs a nd power density W<50 W/cm(2). The changes are due to the transformati on and redistribution of intrinsic point defects in the field of the l aser electromagnetic field. (C) 1997 American Institute of Physics. [S 1063-7826(97)01510-X].