HIGH-TEMPERATURE IRRADIATION OF GALLIUM-ARSENIDE

Deep level transient spectrocopy was used to investigate the introduct ion of P2 and P3 centers into n-type epitaxial layers of GaAs as a res ult of exposure to 4-MeV electrons in the temperature range 380-550 de grees C. It is shown that the rate at which the centers are introduced into the layers is independent of temperature in this range. The P2 c enter concentration is proportional to D-0.7, whereas for the P3 cente r this function is D-0.5, where D is the electron dose. (C) 1997 Ameri can Institute of Physics. [S1063-7826(97)02110-8].