STRUCTURE AND ELECTRICAL-CONDUCTIVITY OF POLYCRYSTALLINE SILICON FILMS GROWN BY MOLECULAR-BEAM DEPOSITION ACCOMPANIED BY LOW-ENERGY ION-BOMBARDMENT OF THE GROWTH SURFACE (VOL 31, PG 237, 1997)

Authors
PAVLOV DA KHOKHLOV AF SHUNGUROV DV SHENGUROV VG
Citation
Da. Pavlov et al., STRUCTURE AND ELECTRICAL-CONDUCTIVITY OF POLYCRYSTALLINE SILICON FILMS GROWN BY MOLECULAR-BEAM DEPOSITION ACCOMPANIED BY LOW-ENERGY ION-BOMBARDMENT OF THE GROWTH SURFACE (VOL 31, PG 237, 1997), Semiconductors, 31(10), 1997, pp. 1099-1099
Citations number
1
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
31
Issue
10
Year of publication
1997
Pages
1099 - 1099
Database
ISI
SICI code
1063-7826(1997)31:10<1099:SAEOPS>2.0.ZU;2-F