CHEMICAL-SHIFT MAPPING OF SI L-EDGES AND K-EDGES USING SPATIALLY-RESOLVED EELS AND ENERGY-FILTERING TEM

Chemical shift mapping has been performed using spatially resolved EEL S and energy-filtering TEM (EF-TEM). For the spatially resolved EELS, a selected area slit is installed and the lenses of the energy filter are realigned. The chemical shift of Si L-23, L-1 and 1( edges is meas ured with a high accuracy of 0.1-0.3 eV. Ln the case of EF-TEM, plural (12) energy-filtered images near the core loss edge of interest are o btained with a narrow energy slit (1.8 eV) and 1.0 eV energy step. The image of core loss energy is constructed by differentiating the plura l energy-filtered images. The chemical shift map of a multilayer (Si3N 4/SiO2/Si) can be clearly observed.