INPLANE ALIGNED PR6O11 BUFFER LAYERS BY ION-BEAM-ASSISTED PULSED-LASER DEPOSITION ON METAL SUBSTRATES

Citation
V. Betz et al., INPLANE ALIGNED PR6O11 BUFFER LAYERS BY ION-BEAM-ASSISTED PULSED-LASER DEPOSITION ON METAL SUBSTRATES, Applied physics letters, 71(20), 1997, pp. 2952-2954
Citations number
18
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
71
Issue
20
Year of publication
1997
Pages
2952 - 2954
Database
ISI
SICI code
0003-6951(1997)71:20<2952:IAPBLB>2.0.ZU;2-X
Abstract
Biaxially aligned praseodymium oxide (Pr6O11) thin films were prepared by ion-beam assisted laser deposition on mechanically polished metal alloy substrates. A low divergence rf plasma source was used as an ass isting source. Deposited films showed (001) oriented film growth with a strong biaxial alignment in the film plane. The degree of in-plane o rientation dependent on ion-to-atom ratio and ion bombardment angle wa s studied. Planar ion channeling along the {110} planes is used to exp lain the observed alignment features. At an ion-to-atom ratio of 0.17 and an ion incident angle of 60 degrees, in-plane orientations of 16 d egrees full width at half-maximum were obtained, Due to the low lattic e mismatch (0.3%) to YBa2Cu3Ox films, the material could be an alterna tive to the YSZ/CeO2 buffer layer system currently used for high criti cal current carrying superconducting tapes. (C) 1997 American Institut e of Physics.