POTENTIAL CONTROLLED STRIPPING OF AN AMORPHOUS AS LAYER ON GAAS(001) IN AN ELECTROLYTE - AN IN-SITU X-RAY-SCATTERING STUDY

Authors
SCHERB G KAZIMIROV A ZEGENHAGEN J SCHULTZ T FEIDENHANSL R FIMLAND BO
Citation
G. Scherb et al., POTENTIAL CONTROLLED STRIPPING OF AN AMORPHOUS AS LAYER ON GAAS(001) IN AN ELECTROLYTE - AN IN-SITU X-RAY-SCATTERING STUDY, Applied physics letters, 71(20), 1997, pp. 2990-2992
Citations number
18
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
71
Issue
20
Year of publication
1997
Pages
2990 - 2992
Database
ISI
SICI code
0003-6951(1997)71:20<2990:PCSOAA>2.0.ZU;2-J
Abstract
We demonstrate that an amorphous As layer deposited as protection on a GaAs(001) surface frown by molecular beam epitaxy can be removed via reductive etching in an electrolytical cell at sufficiently negative e lectrode potentials. Employing a specially constructed electrochemical cell filled with H2SO4. we monitored the stripping process of the 50 nm As cap over a period of hours in situ with x-ray diffraction. Our r esults suggest that, using this potential controlled stripping, smooth and well ordered GaAs(001) surfaces can be obtained in an aqueous ele ctrolyte. (C) 1997 American Institute of Physics.