THE KINETICS OF INTERMIXING OF GAAS ALGAAS QUANTUM-CONFINED HETEROSTRUCTURES/

An atomic-scale model for the kinetics of intermixing of GaAs/AlGaAs. quantum confined heterostructures is presented. It quantifies the effe cts of the statistical nature of defect diffusion through heterostruct ures on the Ga/Al interdiffusion across such an interface, The model h as been validated by successfully predicting the observed amounts of q uantum well intermixing induced by a hydrogen plasma induced defect la yer intermixing process. Agreement within 30% of the measurements was obtained for values of the surface release velocity > 1 mu m s(1). (C) 1997 American Institute of Physics.