PHOTOTHERMAL REFLECTANCE INVESTIGATION OF ION-IMPLANTED 6H-SIC

The photoreflection method is applied to detailed characterization of the ion implanted silicon carbide. Experimentally and theoretically, i t is shown that the photoreflection method can be an effective tool fo r the determination of the dose of implantation and the depth of the i mplanted layer, It is demonstrated that the photoreflection method als o has a high sensitivity to the measurement of optical parameters of t he implanted layer, Experimental results are presented for the case of Lely grown 6H-SiC crystals implanted by 37 keV He+ ions. (C) 1997 Ame rican Insitute of Physics.