SOLUTION DEPOSITION AND HETEROEPITAXIAL CRYSTALLIZATION OF LANIO3 ELECTRODES FOR INTEGRATED FERROELECTRIC DEVICES

Electrically conducting LaNiO3 (LNO) thin layers were deposited on (10 0)SrTiO3 (STO) and (100)LaAlO3 (LAO) substrates and crystallized at te mperatures between 700 and 800 degrees C. The chemical method of depos ition was solution sol-gel processing. X-ray 2 theta and rocking curve measurements, phi scans, and atomic force microscopy studies revealed the degree of crystallinity and heteroepitaxy for the integrated elec trodes. The full-width at half-maximum for (100) LNO deposited on LAO and STO was 0.16 degrees and 0.25 degrees, respectively. Surface bondi ng states and chemistry were examined by x-ray photoelectron spectrosc opy. The room temperature resistivity of LNO electrodes deposited on S TO and LAO was 460 and 340 mu Omega cm, respectively. (C) 1997 America n Institute of Physics.