OSTWALD RIPENING IN 2-DIMENSIONAL AND 3-DIMENSIONAL SYSTEMS OF AS CLUSTERS IN LOW-TEMPERATURE-GROWN GAAS FILMS

Authors
CHALDYSHEV VV BERT NA PREOBRAZHENSKII VV PUTYATO MA SEMYAGIN BR
Citation
Vv. Chaldyshev et al., OSTWALD RIPENING IN 2-DIMENSIONAL AND 3-DIMENSIONAL SYSTEMS OF AS CLUSTERS IN LOW-TEMPERATURE-GROWN GAAS FILMS, Materials science & engineering. A, Structural materials: properties, microstructure and processing, 238(1), 1997, pp. 148-151
Citations number
11
Categorie Soggetti
Material Science
Journal title
Materials science & engineering. A, Structural materials: properties, microstructure and processing → ACNP
ISSN journal
09215093
Volume
238
Issue
1
Year of publication
1997
Pages
148 - 151
Database
ISI
SICI code
0921-5093(1997)238:1<148:ORI2A3>2.0.ZU;2-F
Abstract
Two-dimensional (2D) sheets of As clusters were produced in the crysta lline GaAs matrix using molecular-beam epitaxy (MBE) at low temperatur e, indium delta-doping, and subsequent annealing. The sheets were inse rted into a 3D array of arsenic clusters. Ostwald ripening in 2D and 3 D cluster systems was studied using cross-sectional transmission elect ron microscopy. The cluster growth rate was found to be lower in the 2 D system, than in the 3D one. The thickness of the 2D sheets increased with cluster coarsening and was evaluated as double average cluster d iameter. The limitations were found for design of structures with buil t-in 2D sheets of As clusters separated by cluster-free GaAs matrix. ( C) 1997 Elsevier Science S.A.