INFRARED CHARACTERIZATION OF CARBONIZATION OF SI SURFACES BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

The carbonization and epitaxial growth of cubic SiC films on Si(100) s ubstrates using C2H2 and solid Si sources has been investigated by mea ns of infra-red Fourier transform spectroscopy. The carbonization of t he Si surface is performed under continuous C2H2 flux in two steps: an ordinary process, plus an increase of the substrate temperature to it s final value. Subsequent epitaxial films were grown under simultaneou s supply of elemental Si and C2H2 gas beam. Infra-red reflectivity spe ctra of samples under different conditions are reported and permit the direct verification for the presence of SiC in carbonized layers, mea sure the thickness of the films and evaluate their quality. (C) 1997 E lsevier Science S.A.