DEPOSITION OF CARBON NITRIDE VIA HOT-FILAMENT ASSISTED CVD AND PULSED-LASER DEPOSITION

Bias-assisted hot filament chemical vapour deposition (HFCVD) and ion- assisted pulsed laser deposition (IA-PLD) have been employed to deposi t carbon nitride films. Crystalline C-N films composed of alpha- and b eta-C3N4, as well as some unpredicted C-N solids have been synthesized on Ni(100) substrates via HFCVD using a gas mixture of nitrogen and m ethane. The crystal constants of the alpha- and beta-C3N4 phases, obta ined via X-ray diffraction, coincide well with those predicted theoret ically; additionally, cone-shaped crystals are observed on the Si(100) substrates. Similarly, high density cone-shaped (Si)-C-N crystals hav e been obtained on Si(100) substrates via ion-assisted pulsed laser ab lation of a carbon (graphite) target intersecting a nitrogen ion beam. Amorphous C-N films were also produced using this method. (C) 1997 El sevier Science S.A.