Hydrogen molecules are formed in crystalline silicon treated with atom
ic hydrogen. We have investigated the effect of defects in silicon on
the formation of hydrogen molecules. Raman measurements were taken on
crystalline, microcrystalline and amorphous silicon after treatment wi
th atomic hydrogen. A vibrational line of Hz was observed in crystalli
ne and microcrystalline silicon after treatment with atomic hydrogen.
The intensity of the vibrational line in microcrystalline silicon is a
pproximately one fifth of that observed in crystalline silicon. No Ram
an signals due to Ha were detected in either amorphous Si:H or amorpho
us silicon produced by ion implantation. These results suggest that hy
drogen molecules observed in hydrogenated crystalline silicon are trap
ped in the interstitial sites in nondamaged crystals of silicon.