A GENERAL-SOLUTION TO LASER-INDUCED HEATING AND MELTING IN SEMICONDUCTORS

Authors
SHEN ZH LU J NI XW
Citation
Zh. Shen et al., A GENERAL-SOLUTION TO LASER-INDUCED HEATING AND MELTING IN SEMICONDUCTORS, Microwave and optical technology letters, 16(5), 1997, pp. 303-307
Citations number
6
Categorie Soggetti
Optics,"Engineering, Eletrical & Electronic
Journal title
Microwave and optical technology letters → ACNP
ISSN journal
08952477
Volume
16
Issue
5
Year of publication
1997
Pages
303 - 307
Database
ISI
SICI code
0895-2477(1997)16:5<303:AGTLHA>2.0.ZU;2-0
Abstract
An analytical method for heating the problem of laser heating and melt ing is developed in this paper by suggesting a simple and reasonable t emperature profile form. Temperature distributions in material before melting as well as after melting are given, and the movement of the ph ase interface ii also obtained As an illustrative example, computation s are carried out on silicon material, and the results are in good agr eement with those obtained by other authors. (C) 1997 John Wiley & Son s, Inc.