EFFECTS OF LATTICE STEPS ON ATOM DYNAMICS, SURFACE-DIFFUSION AND EPITAXIAL-GROWTH

Authors
Citation
Tt. Tsong et Ty. Fu, EFFECTS OF LATTICE STEPS ON ATOM DYNAMICS, SURFACE-DIFFUSION AND EPITAXIAL-GROWTH, Applied surface science, 121, 1997, pp. 34-43
Citations number
26
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
ISSN journal
01694332
Volume
121
Year of publication
1997
Pages
34 - 43
Database
ISI
SICI code
0169-4332(1997)121:<34:EOLSOA>2.0.ZU;2-#
Abstract
When an adatom encounters a lattice step, it can either be reflected o r not reflected regardless of whether the step is a 'descending or an ascending' step. These two types of steps are remarkably similar. In a ddition, lattice steps can act as atom-trap boundaries for diffusing a toms. Our FIM studies are briefly summarized. Based on our experimenta l data, we explain in simple terms that the 'high temperature' behavio r of surface atoms and growth structures in thin film epitaxy are dete rmined by the atom trapping property of the steps, whereas the 'low te mperature' behavior and growth structures are determined by the reflec tion property of the steps. (C) 1997 Elsevier Science B.V.