When an adatom encounters a lattice step, it can either be reflected o
r not reflected regardless of whether the step is a 'descending or an
ascending' step. These two types of steps are remarkably similar. In a
ddition, lattice steps can act as atom-trap boundaries for diffusing a
toms. Our FIM studies are briefly summarized. Based on our experimenta
l data, we explain in simple terms that the 'high temperature' behavio
r of surface atoms and growth structures in thin film epitaxy are dete
rmined by the atom trapping property of the steps, whereas the 'low te
mperature' behavior and growth structures are determined by the reflec
tion property of the steps. (C) 1997 Elsevier Science B.V.