STRUCTURAL STUDY OF ELECTROCHEMICALLY DEPOSITED COPPER ON P-GAAS(001)BY ATOMIC-FORCE MICROSCOPY AND SURFACE X-RAY-ABSORPTION FINE-STRUCTURE MEASUREMENT

The structure of electrochemically deposited Cu on p-GaAs(001) was inv estigated by means of atomic force microscopy (AFM) and X-ray absorpti on fine structure (XAFS) measurement. AFM measurement showed that the Cu deposition proceeded strongly depending on the applied potential an d the concentration of Cu2+ ion in solution. Atomic arrangements corre sponding to Cu(111)-(1 x 1) and GaAs(001)-(1 x 1) were observed on top of the Cu deposits and at the regions between the Cu deposits, respec tively. XAFS data demonstrated that the Cu microclusters were formed o n GaAs as initial deposition. (C) 1997 Elsevier Science B.V.