The effect of hydrogen termination on Si(100)-2 x 1 surfaces upon Ag d
eposition at room temperature (RT) and high temperature (350 degrees C
) has been investigated by a scanning tunneling microscopy. The result
s are also compared with those on clean Si(100)-2 x 1 surfaces. When A
g was deposited at RT, small Ag clusters formed on the hydrogen termin
ated surface, in contrast that scattered and relatively individual Ag
atoms formed on a clean Si(100)-2 x 1 surface. As increasing the subst
rate temperature, the size of AS clusters became larger and the shape
gradually changed to rectangular, whose edges were parallel to [011] a
nd [01 (3) over bar] directions, Structural models for these surfaces
are also proposed. (C) 1997 Elsevier Science B.V.