INTERFACE CHEMISTRY OF A TI AU/PT/TI/SIC STRUCTURE/

X-ray photoelectron spectroscopy (XPS) is used to investigate the chem ical reactions and diffusion processes at Ti/Au/Pt/Ti/SiC interfaces f or as deposited and annealed at 575 degrees C for 10 min structures. T he distribution of the elements and the change in their chemical state has been studied. The XP spectra indicate titanium carbide and platin um silicides formation at the SIC interface, which is preceded by the dissociation of SIC due to the reactivity of Ti at 575 degrees C. TIC represents a barrier to the further diffusion of Ti to the SiC bulk an d the Ti layer makes the diffusion of Pt into SIC difficult. The eleme nt distribution of the annealed structure demonstrates that Pt has dif fused through almost the whole gold layer to the surface, an alloy of the two metals being formed. (C) 1997 Elsevier Science B.V.