MODIFICATION OF SEMICONDUCTOR SURFACE WITH ULTRAFINE METAL PARTICLES FOR EFFICIENT PHOTOELECTROCHEMICAL REDUCTION OF CARBON-DIOXIDE

Authors
HINOGAMI R NAKAMURA Y YAE S NAKATO Y
Citation
R. Hinogami et al., MODIFICATION OF SEMICONDUCTOR SURFACE WITH ULTRAFINE METAL PARTICLES FOR EFFICIENT PHOTOELECTROCHEMICAL REDUCTION OF CARBON-DIOXIDE, Applied surface science, 121, 1997, pp. 301-304
Citations number
6
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
121
Year of publication
1997
Pages
301 - 304
Database
ISI
SICI code
0169-4332(1997)121:<301:MOSSWU>2.0.ZU;2-A
Abstract
A p-type silicon (p-Si) electrode modified with small metal (Cu, Au an d Ag) particles works as an ideal-type electrode for photoelectrochemi cal reduction of carbon dioxide, producing carbon monoxide, methane, e thylene, etc., with a large photovoltage of 0.5 V. It is discussed tha t two types of surface-structure control on atomic and nanometer-sized levels are important for getting a high efficiency. (C) 1997 Elsevier Science B.V.