FACETED GAINAS INP NANOSTRUCTURES GROWN BY SELECTIVE-AREA CHEMICAL BEAM EPITAXY/

InP was grown by chemical beam epitaxy in narrow windows of widths var ying between 20 and 2 mu m, oriented along the [011] or [011] directio ns opened in a SiO2 mask on an (001) InP substrate. Several facets app ear along the sidewalls and on the edge of the mesas owing to differen t growth rates on different crystallographic planes. These can be unde rstood as consequences of the migration of group III species from one crystallographic plane to another. We have studied the formation of su ch facets and their effects on the growth of GaInAs/InP structures of various thicknesses. The samples were studied using a field emission s canning electron microscope (SEM) and low temperature photoluminescenc e (PL). SEM micrographs show that for lines oriented along the [011] d irection the dominant InP sidewall facets are (111)B planes on which G aInAs does not grow as long as Ga and In species can migrate towards ( 001). For the orthogonal direction, however, the lateral growth rate o f the InP sidewalls is large and the faceting of the mesas is more com plicated. The PL spectra of GaInAs quantum wells grown on such mesas e xhibit several peaks whose energy depends on the initial width of the mask. They can be interpreted in terms of crystallographic plane depen dent migration and desorption rates of Ga and In species. The (111)B f acets of [011] directed mesas were used to produce inverted V-shaped m esa wire structures. (C) 1997 American Institute of Physics.