OPTICAL AND ELECTRICAL CHARACTERIZATION OF NITROGEN ION-IMPLANTED ZNSSE P-GAAS(100)/

Nitrogen ions were implanted into ZnSxSe1-x epilayers grown on p-GaAs (100) substrates by molecular beam epitaxy (MBE) and metalorganic chem ical vapor deposition (MOCVD). Dopant activation and annealing out the implant damage were achieved by a postannealing process in a N-2 ambi ent. Schottky structures employing the implanted p-type ZnSxSe1-x were fabricated and device efficacy was examined by photoluminescence (PL) spectroscopy, current-voltage (I-V), current-voltage temperature (I-V -T), and high frequency capacitance-voltage (C-V) measurements. PL spe ctra showed a clear donor-acceptor pair (DAP) recombination at an ener gy of 2.735 and 2.72 eV, in both MBE and MOCVD ZnSSe epilayers, respec tively, regardless of the postannealing temperatures. The diode conduc tion in forward bias proceeds by the combination of thermionic and tun neling emission. C-V measurement proved the maximum doping concentrati on to be around 10(17) cm(-3) after ion implantation. (C) 1997 America n Institute of Physics.