ELECTRICAL CHARACTERIZATION OF SUBBANDS IN THE HGCDTE SURFACE-LAYER

Authors
GUI YS ZHENG GZ CHU JH GUO SL ZHANG XC TANG DY CAI Y
Citation
Ys. Gui et al., ELECTRICAL CHARACTERIZATION OF SUBBANDS IN THE HGCDTE SURFACE-LAYER, Journal of applied physics, 82(10), 1997, pp. 5000-5004
Citations number
24
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
82
Issue
10
Year of publication
1997
Pages
5000 - 5004
Database
ISI
SICI code
0021-8979(1997)82:10<5000:ECOSIT>2.0.ZU;2-2
Abstract
The subband dispersion relations have been computed as a function of t he surface electron concentration in the accumulation layers of n-Hg1- xCdxTe photoconductive detectors, while the mobility and concentration for all kinds of carriers in the subband are determined from Shubniko v-de Haas (SdH) oscillation measurements and quantitative mobility spe ctrum analysis (QMSA). The results show that the QMSA can provide accu rate electric parameters for all kinds of carriers in the subband with out considering the complex energy band in the semiconductors, while t he SdH oscillation can only offer qualitative data because the analysi s is based on parabolic energy band approximation. (C) 1997 American I nstitute of Physics.