PROPERTIES AND DENSITY-OF-STATES OF THE INTERFACE BETWEEN SILICON ANDCARBON-FILMS RICH IN SP(3) BONDS

The interface states between n-type Si and amorphous carbon films rich in sp(3) bonds grown by rf magnetron sputtering at room temperature h ave been examined. The investigation aimed to examine the effects of t he low substrate temperature and the absence of hydrogen during the gr owth process on the density of interface states. Thus, comparing the v alues of the interface states to those reported for devices grown by o ther techniques, the best possible interface required for electronic a pplications is suggested. The conductance technique was used to measur e the density of the interface states. This method revealed a value of the traps for the n-Si(100)-carbon interface of the order of 10(10) c m(-2) eV(-1), nearly one order of magnitude lower than any other previ ously reported for the same configuration. (C) 1997 American Institute of Physics.