ELECTRONIC-STRUCTURE OF (GAP)(N) (ALP)(N) SUPERLATTICES/

Authors
AHN JY JEONG SY MOH HJ SHIM K
Citation
Jy. Ahn et al., ELECTRONIC-STRUCTURE OF (GAP)(N) (ALP)(N) SUPERLATTICES/, Journal of the Korean Physical Society, 31(5), 1997, pp. 776-780
Citations number
17
Categorie Soggetti
Physics
Journal title
Journal of the Korean Physical Society → ACNP
ISSN journal
03744884
Volume
31
Issue
5
Year of publication
1997
Pages
776 - 780
Database
ISI
SICI code
0374-4884(1997)31:5<776:EO((S>2.0.ZU;2-M
Abstract
The energy bands and the density of states of (GaP)(n)/(AIP)(n) (001) (n=1 similar to 8) superlattices are investigated by the sp(3)s tight -binding method. We adopt the Al0.5Ga0.5P alloying states for the inte rface parameters between the GaP and the AlP layers. The calculated ba nd gaps are compared with experimental data and with other theoretical results.