COMPUTER DESIGN AND ANALYSIS OF RELAXATION-OSCILLATOR CIRCUITS APPLYING UNIJUNCTION TRANSISTORS

Citation
Fas. Soliman et al., COMPUTER DESIGN AND ANALYSIS OF RELAXATION-OSCILLATOR CIRCUITS APPLYING UNIJUNCTION TRANSISTORS, Microelectronics, 28(6-7), 1997, pp. 609-616
Citations number
12
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
ISSN journal
00262692
Volume
28
Issue
6-7
Year of publication
1997
Pages
609 - 616
Database
ISI
SICI code
0026-2692(1997)28:6-7<609:CDAAOR>2.0.ZU;2-7
Abstract
Performance data for unijunction transistor devices and their applicat ions as oscillator circuits operate at normal and elevated temperature levels (up to 140 degrees C) as well as in nuclear radiation environm ents (up to 1000 Mrad) are presented either experimentally or theoreti cally. Different computer programs are suggested to solve the general equations for;he relaxation oscillators' design and analysis and to in troduce the operating conditions, temperature and nuclear radiation ef fects on their performance. It was found that the experimental and cal culated data are in close agreement. (C) 1997 Elsevier Science Ltd.