INFLUENCE OF THE AZIMUTHAL ANCHORING ENERGY ON THE SMECTIC LAYER FORMATION IN FERROELECTRIC LIQUID-CRYSTALS

Authors
VORFLUSEV VP KITZEROW HS
Citation
Vp. Vorflusev et Hs. Kitzerow, INFLUENCE OF THE AZIMUTHAL ANCHORING ENERGY ON THE SMECTIC LAYER FORMATION IN FERROELECTRIC LIQUID-CRYSTALS, Molecular crystals and liquid crystals science and technology. Section A, Molecular crystals and liquid crystals, 304, 1997, pp. 321
Citations number
12
Categorie Soggetti
Crystallography
Journal title
Molecular crystals and liquid crystals science and technology. Section A, Molecular crystals and liquid crystals → ACNP
ISSN journal
1058725X
Volume
304
Year of publication
1997
Database
ISI
SICI code
1058-725X(1997)304:<321:IOTAAE>2.0.ZU;2-5
Abstract
We have investigated the influence of surface treatment on the memory angle Theta(m) in chevron FLC-cells. Surface anisotropy with different azimuthal anchoring energies was produced either by illumination or b y rubbing of a PVA layer containing an azo dye. Due to the low pretilt angle (Theta(p) <2 degrees), we suppose that the measured value of Th eta(m) is governed by the tilt angle delta of the smectic layers. A mo del is presented which relates the equilibrium value of delta to a bal ance between the azimuthal anchoring energy and the bend energy of the smectic layers in the chevron structure.