CHANGES IN THE SURFACE ELECTRONIC STATES OF QUANTUM-SIZED SEMICONDUCTOR PARTICLES INDUCED BY HIGH-ENERGY PROTON IRRADIATION

Authors
YAMAKI T ASAI K ISHIGURE K SHIBATA H
Citation
T. Yamaki et al., CHANGES IN THE SURFACE ELECTRONIC STATES OF QUANTUM-SIZED SEMICONDUCTOR PARTICLES INDUCED BY HIGH-ENERGY PROTON IRRADIATION, Radiation physics and chemistry, 50(3), 1997, pp. 199-205
Citations number
28
Categorie Soggetti
Nuclear Sciences & Tecnology","Chemistry Physical","Physics, Atomic, Molecular & Chemical
Journal title
Radiation physics and chemistry → ACNP
ISSN journal
0969806X
Volume
50
Issue
3
Year of publication
1997
Pages
199 - 205
Database
ISI
SICI code
0969-806X(1997)50:3<199:CITSES>2.0.ZU;2-L
Abstract
We performed steady-state and time-resolved measurements of the ion-in duced emissions and photoluminescence (PL) measurement on quantum-size d semiconductor particles prepared in Langmuir-Blodgett films. The pro ton irradiation caused a decrease in intensify of the emission via tra pping sites, removing almost all the traps in the band gap. The low en ergy emissions, which showed a multiexponential decay, are considered to originate from a recombination of donor-acceptor pairs localizing i n the surface region. Furthermore, PL spectra obtained after the irrad iation changed drastically in the course of the photo-oxidation of the particles. (C) 1997 Elsevier Science Ltd.