INFLUENCE OF SURFACE OXIDATION ON THE PHOTOELECTRON DIFFRACTION INTENSITIES FROM INP SINGLE-CRYSTALS

The Monte Carlo method was used to calculate the influence of amorphou s overlayers on the angle-dependent intensity distribution due to phot oelectron diffraction (XPD) in monocrystalline substrates. The influen ces of the overlayer thickness, the elastic and inelastic mean free pa ths in the amorphous overlayer, the shape of the initial intensity dis tribution, as well as the overlayer chemical composition, on XPD is di scussed and some trends are formulated. The simulated P 2p intensities of oxidized InP agree with the experimental data. The effect of elast ic scattering on the intensity minimum around the detection angle 18 d egrees is stronger than that of inelastic scattering. A new method for the thickness determination of thin overlayers on single crystals is discussed. (C) 1997 Elsevier Science B.V.