We study InP quantum dots which are prepared by strain induced self-as
sembly on GaAs substrates with a GaInP buffer layer using a near field
scanning optical microscope operating at near liquid He bath temperat
ures in the collection mode. Single quantum dots are identified spatia
lly and spectrally due to their photoluminescence spectrum. Series of
luminescence lines due to single dots of different sizes are discussed
in terms of dot height and width fluctuations. (C) 1997 American Inst
itute of Physics. [S0021-3640(97)01019-0].