PREFERENTIAL CO-SI BONDING AT THE CO SIGE(100) INTERFACE/

The initial stages of the reaction of Co with Si0.79Ge0.21(100) were s tudied in situ with extended x-ray absorption fine structure spectrosc opy and reflection high energy electron diffraction. The Si:Ge ratio i n the first coordination shell of Co in sub-monolayer Co films was fou nd to increase with film thickness and annealing temperature, indicati ng preferential formation of Go-Si bonds. The impact of the observed p reference for Go-Si bonding on the morphology of epitaxial CoSi2/Si1-x Gex heterostructures is discussed. (C) 1997 American Institute of Phys ics.