MICROSTRUCTURE OF AL CONTACTS ON GAAS

The microstructure of Al films deposited on GaAs(100) 2x4 surfaces thr ough chemical vapor deposition from dimethylethylamine alane in the 10 0-160 degrees C temperature range exhibits a dominant (111) texture wh ich is not encountered in evaporated films. Such a texture has been as sociated with enhanced electromigration resistance in related systems. Growth of (111)-oriented grains is observed when the deposition rate is limited by the surface reaction of the impinging precursor molecule s, while at higher temperatures (160-400 degrees C) only the conventio nal texture is observed. (C) 1997 American Institute of Physics.