NOVEL FEATURES IN THE STRAIN PROFILE AND GATE OXIDE CAPACITANCE OF THROUGH-GATE-OXIDE IMPLANTED STRUCTURES

Oxidized silicon samples were implanted with O, Si, or Ar ions. The sa mples were characterized by x-ray triple crystal diffractometry and me tal-oxide-semiconductor admittance spectroscopy to reveal information on the nature of the ion-induced damage. The experimental results on t he strain profile, gate oxide capacitance, etc., exhibited novel featu res. These interesting results suggest ion-damage-induced precipitatio n of SiO2 particles in silicon and oxidation of the silicon subsurface by the injection of the recoil O atoms from the gate oxide into the s ilicon subsurface, both at room temperature. (C) 1997 American Institu te of Physics.