SPATIALLY SELECTIVE DISORDERING OF INGAAS GAAS QUANTUM-WELLS USING ANALAS NATIVE-OXIDE AND THERMAL ANNEALING TECHNIQUE/

An InGaAs/GaAs quantum well (QW) disordering technique using AlAs nati ve oxide and thermal annealing is presented. Unlike dielectric cap dis ordering, the AlAs native oxide can be placed close to quantum wells a llowing for a spatially selective disordering deep within multilayer s tructures. The QW energy shifts and spatial control of the disordering were studied with photoluminescence and cathodoluminescence. The QW e nergy shift of thermally disordered regions containing buried oxide la yer is similar to 45 meV greater than that of regions not containing b uried oxide layers. The disordering transition width is estimated to b e similar to 1 mu m. (C) 1997 American Institute of Physics.