LOCALIZED ELECTRON TRAPPING AND TRAP DISTRIBUTIONS IN SIO2 GATE OXIDES

Localized trap filling and trap creation in SiO2 were investigated by injecting electrons into metal-oxide-semiconductor structures with a s canning tunneling microscope, The resulting charging causes changes in the oxide potential that were studied as a function of an applied oxi de field. The charge densities and charge distributions were obtained by modeling the field dependence of the potential arising from multipl e sets of sheet charges in the oxide. (C) 1997 American Institute of P hysics.