POLARIZATION-FIELD EFFECTS ON THE ELECTRON-HOLE RECOMBINATION DYNAMICS IN IN0.2GA0.8N IN1-XGAXN MULTIPLE-QUANTUM WELLS/

Authors
NARDELLI MB RAPCEWICZ K BERNHOLC J
Citation
Mb. Nardelli et al., POLARIZATION-FIELD EFFECTS ON THE ELECTRON-HOLE RECOMBINATION DYNAMICS IN IN0.2GA0.8N IN1-XGAXN MULTIPLE-QUANTUM WELLS/, Applied physics letters, 71(21), 1997, pp. 3135-3137
Citations number
19
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
71
Issue
21
Year of publication
1997
Pages
3135 - 3137
Database
ISI
SICI code
0003-6951(1997)71:21<3135:PEOTER>2.0.ZU;2-#
Abstract
The effect of the polarization field in wurtzite In0.2Ga0.8N/In1-xGaxN (x > 0.8) multiple quantum wells is studied from first principles. Th e pyroelectric and piezoelectric fields naturally present in the syste m due to its wurtzite structure are strong enough to reduce the interb and recombination rate in an ideal quantum well. We suggest that compo sition fluctuations, observed in the active region of actual devices, provide the necessary confinement for an improved recombination rate a nd lasing. (C) 1997 American Institute of Physics.