DEPENDENCE OF READ WRITE OPERATIONS ON UNIAXIAL ANISOTROPY CONSTANT IN BLOCH LINE MEMORIES/

Citation
K. Fujimoto et al., DEPENDENCE OF READ WRITE OPERATIONS ON UNIAXIAL ANISOTROPY CONSTANT IN BLOCH LINE MEMORIES/, IEEE transactions on magnetics, 33(6), 1997, pp. 4469-4474
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
ISSN journal
00189464
Volume
33
Issue
6
Year of publication
1997
Pages
4469 - 4474
Database
ISI
SICI code
0018-9464(1997)33:6<4469:DORWOO>2.0.ZU;2-Y
Abstract
Characteristics of read/write (R/W) operations in Bloch line (BL) memo ry test structures have been investigated in order to find out which m aterial characteristics of the magnetic garnet film have influence on the R/W margins, Two types of magnetic garnet films were investigated: one type has wide R/W margins, and the other has narrow R/W margins, The uniaxial anisotropy constant (Ku) of the magnetic garnet film with the wide R/W margins is twice as large as that of the film with the n arrow R/W margins, It has been found that the stripe domain is easy to chop, and horizontal Bloch lines (HBL's) are easy to nucleate in the magnetic garnet film with the narrow R/W margins, It is thought that t hese phenomena come from the ease of the domain wall motion, Since the domain wall tends to move easily for small values of Ku, resulting in relatively easy domain chopping and HBL nucleation, the implication i s that Ku should be increased in order to obtain wide R/W margins.