DEFLECTION AND EXTRACTION OF PB IONS UP TO 33 TEV C BY A BENT SILICONCRYSTAL/

Citation
G. Arduini et al., DEFLECTION AND EXTRACTION OF PB IONS UP TO 33 TEV C BY A BENT SILICONCRYSTAL/, Physical review letters, 79(21), 1997, pp. 4182-4185
Citations number
15
Categorie Soggetti
Physics
Journal title
ISSN journal
00319007
Volume
79
Issue
21
Year of publication
1997
Pages
4182 - 4185
Database
ISI
SICI code
0031-9007(1997)79:21<4182:DAEOPI>2.0.ZU;2-G
Abstract
The first results from an experiment to deflect a beam of fully stripp ed, ultrarelativistic pb(82+) ions of 400 GeV/c per unit of charge, eq uivalent to 33 TeV/c, by means of a bent crystal are reported. Deflect ion efficiencies are as high as 14%, in agreement with theoretical est imates. In a second experiment a bent crystal was used to extract 270 GeV/c-per-charge pb(82+) (22 TeV/c) ions from a coasting beam in the C ERN-SPS, and a high extraction efficiency of up to 10% was found. Thes e represent the first measurements to demonstrate applications of bent crystals in high energy heavy ion beams.