NUMERICAL-SIMULATION OF BROAD-AREA HIGH-POWER SEMICONDUCTOR-LASER AMPLIFIERS

Citation
Z. Dai et al., NUMERICAL-SIMULATION OF BROAD-AREA HIGH-POWER SEMICONDUCTOR-LASER AMPLIFIERS, IEEE journal of quantum electronics, 33(12), 1997, pp. 2240-2254
Citations number
47
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
ISSN journal
00189197
Volume
33
Issue
12
Year of publication
1997
Pages
2240 - 2254
Database
ISI
SICI code
0018-9197(1997)33:12<2240:NOBHSA>2.0.ZU;2-Y
Abstract
A comprehensive model is presented to study the electrical, thermal, a nd optical behavior of broad-area traveling-wave semiconductor amplifi ers, Finite-element thermal analysis and carrier transport mechanisms are integrated into the beam propagation method to include thermal len sing and optically induced nonlinearities, A self-consistent iteration is developed to simulate the beam filamentation in broad-area semicon ductor amplifiers with residual facet reflectivities. The experimental ly observed periodic filamentation with intensity minima close to zero is investigated numerically.