LOW-TEMPERATURE EPITAXY AND TRANSIENT DIFFUSION MECHANISMS ON CU(100)

The transient diffusion processes in low-temperature epitaxial growth for the first time have been classified and studied by using molecular -dynamics simulations with a hybrid tight-binding-like potential and t aking Cu on Cu(100) surface as an example. The observed diffraction-in tensity oscillations show that a quasi-layer-by-layer growth may take place for temperatures as loa as 100 K. Furthermore, it has been found that the impact cascade diffusion mechanism plays a noticeable role i n promoting atomic mobility and improving the smoothness of thin-film growth in the initial stage.