SINGLE-CRYSTAL GROWTH OF (MOXCR1-X)ALB AND (MOXW1-X)ALB BY METAL AL SOLUTIONS AND PROPERTIES OF THE CRYSTALS

Citation
S. Okada et al., SINGLE-CRYSTAL GROWTH OF (MOXCR1-X)ALB AND (MOXW1-X)ALB BY METAL AL SOLUTIONS AND PROPERTIES OF THE CRYSTALS, Journal of solid state chemistry, 133(1), 1997, pp. 36-43
Citations number
14
Categorie Soggetti
Chemistry Inorganic & Nuclear","Chemistry Physical
ISSN journal
00224596
Volume
133
Issue
1
Year of publication
1997
Pages
36 - 43
Database
ISI
SICI code
0022-4596(1997)133:1<36:SGO(A(>2.0.ZU;2-U
Abstract
The single crystals of ternary borides MoAlB and WAlB, and quaternary borides (MoXME1-X) AlB (ME = Cr, W, V, Nb, Ta) were grown bg the flux method using molten aluminium as a solvent, The as-growth MoAlB, WAlB, (MoXCr1-X)AlB, and (MoXW1-X)AlB single crystals were subjected to che mical analyses and measurements of unit cell parameters, The homogenei ty range for the solid solutions of (MoXCr1-X)AlB and (MoXW1-X)AlB cry stals was studied by X-ray powder diffraction and chemical analyses, H owever, the crystals of the ternary boride VAlB, NbAlB, and TaAlB and the quaternary boride (MoXV1-X)AlB, (MoXNb1-X)AlB, and (MoXTa1-X)AlB c ompounds were not obtained, Crystallographic data, crystal size, cryst al morphology, Vickers microhardness and electrical resistivity, and o xidation resistivity heated in air of MoAlB, WAlB, and (MoXME1-X)AlB ( ME = Cr and W) crystals were studied. (C) 1997 Academic Press.