PREPARATION OF (N)A-SI-H (P)C-SI HETEROJUNCTION SOLAR-CELLS/

Citation
D. Borchert et al., PREPARATION OF (N)A-SI-H (P)C-SI HETEROJUNCTION SOLAR-CELLS/, Solar energy materials and solar cells, 49(1-4), 1997, pp. 53-59
Citations number
5
Categorie Soggetti
Energy & Fuels","Material Science
ISSN journal
09270248
Volume
49
Issue
1-4
Year of publication
1997
Pages
53 - 59
Database
ISI
SICI code
0927-0248(1997)49:1-4<53:PO((HS>2.0.ZU;2-0
Abstract
Heterojunction solar cells have been manufactured by depositing n-type a-Si:H on p-type 1-2 Omega cm CZ single crystalline silicon substrate s. Although our cell structure is very simple - neither a BSF nor a su rface texturing is used - a conversion efficiency of 13.1% has been ac hieved on an area of 1 cm(2). In this paper the technology is describe d and the dependence of the solar cell parameters on the properties of the n-type a-Si:H layer is discussed. It is shown that this cell type exhibits no degradation under light exposure.