Heterojunction solar cells have been manufactured by depositing n-type
a-Si:H on p-type 1-2 Omega cm CZ single crystalline silicon substrate
s. Although our cell structure is very simple - neither a BSF nor a su
rface texturing is used - a conversion efficiency of 13.1% has been ac
hieved on an area of 1 cm(2). In this paper the technology is describe
d and the dependence of the solar cell parameters on the properties of
the n-type a-Si:H layer is discussed. It is shown that this cell type
exhibits no degradation under light exposure.